China Photoresist Plate for dot matrix machine,Photoresist Plate for dot matrix machine Manufacturer
Hologram Machine
(6)
Hologram Design
(5)
Making method of photoresist plate: evenly coating chosen photoresist to transparent basic plate like glass ,quartz by machine
Reference to the semiconductor and LSI process requirements to cleansing treatment
100 level dust-free clean environment to protect the surface of clean and spotless photoresist
Double thickness of the photoresist layer, to ensure adequate relief etching depth
Special double-grinding process to make uniform the thickness of glass to match the large-scale use of precision lithography
Photoresist plate size
|
Model |
Size(cm) |
Thickness(mm) |
Raw plate Accuracy |
Raw plate anti vignetting |
Recommend |
Ex-works price (per piece) |
|
|
|
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|
GZ3-II |
20.3×25.4 |
3 |
B(Sm) |
/ |
Photo,lithography |
57.1$ |
|
GZ3-III |
20.3×25.4 |
3 |
C(S) |
Antireflective,deaden |
Photo |
72.8$ |
|
GZ5-III |
50.8×50.8 |
3 |
D(W) |
Antireflective,deaden |
Photo |
376.8$ |
|
GZ5-II |
50.8×50.8 |
3 |
C(S) |
/ |
Photo,lithography |
370.5$ |
|
GZ6-III |
55.8x45.8 |
3 |
D(W) |
Antireflective,deaden |
Photo |
378.7$ |
|
GZ7-II |
65.0x 45.0 |
3 |
D(W) |
/ |
Lithography |
571.5$ |
Big plate container is $96/ piece, outside packing box is $58/ piece.
Photographic Sensitivity Test:
Exposure error tolerance:Development conditions:1.25%NaOH solution,23°C,10 seconds.
Width (microns)
Exposure Energy (mj/cm2)
Resolution:
Test conditions: exposure wavelength 441.6nm,405nm,355nm,315nm, helium-cadmium lasers, interference exposure, developing conditions: 1.25% NaOH solution, 23°C, 10 seconds.
